Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 nm Node, IEEE Transactions on Electron Devices, 69(1), 31-38,2022.
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Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 nm Node, IEEE Transactions on Electron Devices, 69(1), 31-38,2022.
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